Method of forming aliminum conductor path

  • Inventors:
  • Assignees: Itt
  • Publication Date: December 05, 1979
  • Publication Number: JP-S54154291-A

Patent Citations (2)

    Publication numberPublication dateAssigneeTitle
    JP-S4949180-AMay 13, 1974
    JP-S51137682-ANovember 27, 1976Hitachi LtdGas phase ch emical reaction system

NO-Patent Citations (0)

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    JP-S5985857-AMay 17, 1984Semiconductor Energy Lab Co LtdPreparation of aluminum film
    JP-S61245523-AOctober 31, 1986Fujitsu LtdMethod for growth of aluminum film
    JP-S61272379-ADecember 02, 1986Fujitsu LtdCvd method for aluminum
    JP-S6211227-AJanuary 20, 1987Fujitsu LtdManufacture of semiconductor device
    JP-S62239526-AOctober 20, 1987Fujitsu LtdEpitaxial growth process for metallic coating